기계 유형
Atomic Layer Deposition
Product name
PEALD plasma enhanced Atomic Layer Deposition System
Sample table size
4-8 inches
Substrate heating temperature
RT-400 degrees, control accuracy: ±1℃
Source container temperature
RT-200 ℃; ±1 ℃
Vacuum reaction chamber
316 stainless steel chamber
Precursor delivery system
4-8 channels (optional liquid source, solid source and gas source)
Deposition mode
fast mode, high aspect ratio mode and professional doping mode
Plasma generation method
ICP
Plasma gas
O2, N2, NH3, H2