내화도 (정도)
Common (1580°< Refractoriness< 1770°)
Max working temperature
1700℃
Thermal conductivity
0.08W/(m*K)
Bulk density
2.6-3.3g/cm³
Product name
Silicon carbide sic double spiral infrared heating element
Feature
silicon carbide heating element
Attribute
silicon carbide sic infrared heating element