설명
IGBT 600 V 50 A 230 W Through Hole TO-3P(N)
DC 전류 이득 (hFE) (최소) @ Ic Vce
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입력 커패시턴스 (Ciss) (최대) @ Vds
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드라이브 전압 (최대 Rds, Min Rds)
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전류 드레인 (Idss) @ Vds (Vgs = 0)
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응용프로그램
PFC, UPS & Inverter
Manufacturer Product Number
GT50JR22
Voltage - Collector Emitter Breakdown
600 V
Price
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Description
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM