Applicable Industries
기타, semiconductor
Design Temperature (℃)
1250-2200
Woring temperature
900-1200℃
Pressure rise rate (Pa/h)
0.67Pa/h(150Pa/24h)
Heating method
Resistance/induction
Working atmosphere
vacuum/CH4/C3H6/H2/N2/Ar
Furnace type
Square/roundVertical/Horizontal
Furnace cooling mode
furnace shell water cooling
Infrared instrument
single/double colorimetric
Limit vacuum Degree(Pa)
1-100