Has External Power Supply
아니다
Read speed
601-700 메가바이트/초
Write speed
601-700 메가바이트/초
interface
PCIe Gen 3.0 x 4, NVMe 1.3
NAND flash
Samsung V-NAND 3-bit MLC
controller
Samsung internal controller
Permissible voltage
3.3 V ± 5 % permissible voltage
reliability
150.<> million hours (MTBF)
Operating temperature
0 - 70 °C operating temperature
Seismic
1,500 G & 0.5 ms (half sinusoidal)