원래 장소
California, United States
DC 전류 이득 (hFE) (최소) @ Ic Vce
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입력 커패시턴스 (Ciss) (최대) @ Vds
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드라이브 전압 (최대 Rds, Min Rds)
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전류 드레인 (Idss) @ Vds (Vgs = 0)
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Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
340mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.5Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250uA
Gate Charge (Qg) (Max) @ Vgs
1.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
27.5 pF @ 30 V