설명
Low Intrinsic Capacitances, Excellent Switching Characteristics, Extended Safe Operating Area, Unrivalled Gate Charge, 100% Avalanche Tested
신청
high efficient DC to DC converters
品名
650V 2A N-Channel Power MOSFET
전류 콜렉터 (Ic) (최대)
2A(TC=25℃), 1.25A(TC=100℃)
Rds (Max) @ Id, Vgs
4.8 Ohm
게이트 충전 (Qg) (최대) @ Vgs
6.7nC
입력 커패시턴스 (Ciss) (최대) @ Vds
320pF @ 25V
드라이브 전압 (최대 Rds, Min Rds)
2.0V
입력 커패시턴스 (Cies) @ Vce
320pF
전류 드레인 (Idss) @ Vds (Vgs = 0)
1uA
트랜지스터 유형
MOSFET transistor, N-Channel, Enhancement Mode
Drain Current(TC=100℃)
1.25A
Single Pulse Avalanche Energy
120mJ
Maximum Power Dissipation(TC=25℃)
28W
Gate-body leakage Current, Forward
100nA
Gate Threshold Voltage
2 V~ 4V
Application 1
UPS Applications
Application 2
DC-DC Converters and AC-DC Power Supply